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PD - 97391B
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
* * * * * * * * Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-Free
IRG7PH42UDPBF IRG7PH42UD-EP
C
VCES = 1200V IC = 45A, TC = 100C
G E
TJ(max) = 150C
Benefits
* High efficiency in a wide range of applications * Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses * Rugged transient performance for increased reliability * Excellent current sharing in parallel operation
n-channel
C
VCE(on) typ. = 1.7V
C
Applications
* * * * U.P.S. Welding Solar Inverter Induction Heating
GC
E
TO-247AC IRG7PH42UDPBF
E GC TO-247AD IRG7PH42UD-EP
G Gate
C Collector
E Emitter
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C INOMINAL ICM ILM IF @ TC = 25C IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current (Silicon Limited) Continuous Collector Current (Silicon Limited) Nominal Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Max.
1200 85g 45 30 90 120 85 45 120 30 320 130 -55 to +150
Units
V
c
A
d
Continuous Gate-to-Emitter Voltage
V W
C
Thermal Resistance
RJC (IGBT) RJC (Diode) RCS RJA
f Thermal Resistance Junction-to-Case-(each Diode) f
Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount)
Parameter
Min.
--- --- --- ---
Typ.
--- --- 0.24 40
Max.
0.39 0.56 --- ---
Units
C/W
1
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10/26/09
IRG7PH42UDPBF/IRG7PH42UD-EP
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)CES
V(BR)CES/TJ
Min.
1200 -- -- -- 3.0 -- -- -- -- -- -- --
Typ.
-- 0.18 1.7 2.1 -- -14 32 4.4 1200 2.0 2.2 --
Max. Units
-- -- 2.0 -- 6.0 -- -- 150 -- 2.4 -- 100 nA V V
Conditions
VGE = 0V, IC = 100A
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
e
VCE(on) VGE(th)
VGE(th)/TJ
Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
V/C VGE = 0V, IC = 2.0mA (25C-150C) IC = 30A, VGE = 15V, TJ = 25C V V S A IC = 30A, VGE = 15V, TJ = 150C VCE = VGE, IC = 1.0mA VCE = 50V, IC = 30A, PW = 80s VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 150C IF = 30A IF = 30A, TJ = 150C VGE = 30V
mV/C VCE = VGE, IC = 1.0mA (25C - 150C)
gfe ICES VFM IGES
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA Erec trr Irr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current
Min.
-- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Typ.
157 21 69 2105 1182 3287 25 32 229 63 2978 1968 4946 19 32 290 154 3338 124 75
Max. Units
236 32 104 2374 1424 3798 34 41 271 86 -- -- -- -- -- -- -- -- -- -- pF VGE = 0V VCC = 30V ns J ns J nC IC = 30A VGE = 15V VCC = 600V
Conditions
IC = 30A, VCC = 600V, VGE = 15V RG = 10, L = 200H,TJ = 25C
Energy losses include tail & diode reverse recovery
IC = 30A, VCC = 600V, VGE=15V RG=10, L=200H, TJ = 150C
eA
Energy losses include tail & diode reverse recovery
f = 1.0Mhz TJ = 150C, IC = 120A VCC = 960V, Vp =1200V Rg = 10, VGE = +20V to 0V
FULL SQUARE -- -- -- 1475 153 34 -- -- -- J ns A
TJ = 150C VCC = 600V, IF = 30A Rg = 10, L =1.0mH
Notes: VCC = 80% (VCES), VGE = 20V, L = 22H, RG = 10. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. R is measured at TJ of approximately 90C. Calculated continuous current based on maximum allowable junction temperature.
Bond wire current limit is 78A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
2
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IRG7PH42UDPBF/IRG7PH42UD-EP
60 50
Load Current ( A )
40 30
Square wave: 60% of rated voltage
I
For both: Duty cycle : 50% Tj = 150C Tsink = 90C Gate drive as specified Power Dissipation = 95W
20 10 0 0.1
Ideal diodes
1 f , Frequency ( kHz )
10
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
350 300 250
80
60
Ptot (W)
IC (A)
200 150 100 50
40
20
0 25 50 75 100 T C (C) 125 150 175
0 0 20 40 60 80 100 120 140 160 T C (C)
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
1000
Fig. 2 - Power Dissipation vs. Case Temperature
1000
100 100
IC (A)
10 DC 1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 VCE (V) 1000 10000 100sec 1msec
IC (A)
10 1 10 100 VCE (V) 1000 10000
10sec
Fig. 3 - Forward SOA TC = 25C, TJ 150C; VGE =15V
Fig. 4 - Reverse Bias SOA TJ = 150C; VGE = 20V
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3
IRG7PH42UDPBF/IRG7PH42UD-EP
120 100 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
120 100 80
ICE (A)
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
ICE (A)
60 40 20 0 0 2 4 6 8 10 VCE (V)
60 40 20 0 0 2 4 6 8 10 VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s
120 100 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s
120 100 80
-40C 25C 150C
ICE (A)
IF (A)
60 40 20 0 0 2 4 6 8 10 VCE (V)
60 40 20 0 0.0 1.0 2.0 3.0 VF (V) 4.0 5.0 6.0
Fig. 7 - Typ. IGBT Output Characteristics TJ = 150C; tp = 80s
12 10 8
VCE (V)
Fig. 8 - Typ. Diode Forward Characteristics tp = 80s
12 10 8
VCE (V)
6 4 2 0 4 8
ICE = 15A ICE = 30A ICE = 60A
6 4 2 0
ICE = 15A ICE = 30A ICE = 60A
12 VGE (V)
16
20
4
8
12 VGE (V)
16
20
Fig. 9 - Typical VCE vs. VGE TJ = -40C
Fig. 10 - Typical VCE vs. VGE TJ = 25C
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IRG7PH42UDPBF/IRG7PH42UD-EP
12
ICE, Collector-to-Emitter Current (A)
120 100 80 60 40 20 0 4 8 12 VGE (V) 16 20 4 6 8 10 12 VGE, Gate-to-Emitter Voltage (V) T J = 25C T J = 150C
10 8 6 4 2 0 ICE = 15A ICE = 30A ICE = 60A
VCE (V)
Fig. 11 - Typical VCE vs. VGE TJ = 150C
7000 6000 5000
Energy (J)
Fig. 12 - Typ. Transfer Characteristics VCE = 50V
1000 tF
Swiching Time (ns)
4000 EON 3000 2000 EOFF 1000 0 0 10 20 30 IC (A) 40 50 60
tdOFF 100
tR tdON 10 0 10 20 30 IC (A) 40 50 60
Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L = 200H; VCE = 600V, RG = 10; VGE = 15V
6000
Fig. 14 - Typ. Switching Time vs. IC TJ = 150C; L = 200H; VCE = 600V, RG = 10; VGE = 15V
10000
5000
Swiching Time (ns)
Energy (J)
4000
EON EOFF
1000
td OFF
3000
tF 100 tR tdON
2000
1000 0 20 40 60 80 100 RG ()
10 0 20 40 60 80 100 RG ()
Fig. 15 - Typ. Energy Loss vs. RG TJ = 150C; L = 200H; VCE = 600V, ICE = 30A; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG TJ = 150C; L = 200H; VCE = 600V, ICE = 30A; VGE = 15V
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IRG7PH42UDPBF/IRG7PH42UD-EP
50 RG = 5.0 40 RG = 10 30 RG = 47 35 40
IRR (A)
IRR (A)
60
30
20
RG = 100
25
10 15 20 25 30 35 40 45 50 55 IF (A)
20 0 20 40 60 80 100 RG ()
Fig. 17 - Typ. Diode IRR vs. IF TJ = 150C
40
9000 8000
Fig. 18 - Typ. Diode IRR vs. RG TJ = 150C
60A 5.0 10 47 100 30A
35
QRR (nC)
7000 6000 5000 4000 3000
IRR (A)
30
25
15A
20 0 200 400 600 800 1000 1200 diF /dt (A/s)
2000 0 200 400 600 800 1000 1200 1400 diF /dt (A/s)
Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 600V; VGE = 15V; IF = 30A; TJ = 150C
3500 RG = 5.0 3000 2500 RG = 10 RG = 47 RG = 100
Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 600V; VGE = 15V; TJ = 150C
Energy (J)
2000 1500 1000 500 15 20 25 30 35 40 45 50 55 60 IF (A)
Fig. 21 - Typ. Diode ERR vs. IF TJ = 150C
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IRG7PH42UDPBF/IRG7PH42UD-EP
10000
16
VGE, Gate-to-Emitter Voltage (V)
14 12 10 8 6 4 2 0
Cies
VCES = 600V VCES = 400V
Capacitance (pF)
1000
100
Coes
Cres 10 0 100 200 300 VCE (V) 400 500 600
0
20
40
60
80 100 120 140 160 180
Q G, Total Gate Charge (nC)
Fig. 22 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
1
Fig. 23 - Typical Gate Charge vs. VGE ICE = 30A; L = 600H
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05
0.01
0.02 0.01
J
R1 R1 J 1 2
R2 R2
R3 R3 3
R4 R4 C 4
Ri (C/W)
0.1306 0.1752 0.0814 0.0031
0.000313 0.002056 0.008349 0.043100
i (sec)
1
2
3
4
0.001 SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1
0.0001 1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1 D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05
0.01
0.02 0.01
J
R1 R1 J 1 2
R2 R2
R3 R3 3
R4 R4 C 4
Ri (C/W)
0.1254 0.0937 0.1889 0.1511
i (sec)
0.000515 0.000515 0.001225 0.018229
1
2
3
4
0.001 SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1
0.0001 1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig. 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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IRG7PH42UDPBF/IRG7PH42UD-EP
L
L
0
DUT 1K
VCC
80 V +
-
DUT Rg
VCC
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp / DUT L
Fig.C.T.2 - RBSOA Circuit
R=
VCC ICM
-5V DUT / DRIVER Rg VCC
Rg
DUT
VCC
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - Resistive Load Circuit
C force
100K D1 DUT
0.0075F
22K
C sense
G force
E sense
E force
Fig.C.T.5 - BVCES Filter Circuit
8
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IRG7PH42UDPBF/IRG7PH42UD-EP
900 800 700 600 500 VCE (V) 400 300 200 100 0 -100 -0.5
Eof f Loss 90% ICE
90 tf 80 70 60 50
900 800 700 600 500 VCE (V)
ICE (A)
90% test current
90 tr
TEST CURRENT
80 70 60 50 40 30 ICE (A)
40 30 20 10 0 -10 1.5 2
400 300 200 100 0 -100 9.4
5% V CE 5% ICE
10% test current
20
5% V CE
10 0
Eon Loss
0
0.5
1
9.6
9.8 time (s)
10
-10 10.2
time(s)
Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 150C using Fig. CT.4
40 30 20 10 IF (A) 0 -10 -20 -30 -40 -0.25
Peak IRR
E REC tRR
10% Peak IRR
0.00
0.25
0.50
0.75
1.00
time (S)
Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 150C using Fig. CT.4
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IRG7PH42UDPBF/IRG7PH42UD-EP
Dimensions are shown in millimeters (inches)
TO-247AC Package Outline
TO-247AC Part Marking Information
@Y6HQG@) UCDTADTA6IADSAQ@"A XDUCA6TT@H7GA GPUA8P9@A$%$& 6TT@H7G@9APIAXXA"$A! DIAUC@A6TT@H7GAGDI@AACA Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqArrA
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@
Q6SUAIVH7@S
,5)3(
A "$C $%AAAAAAAAAAA$&
96U@A8P9@ @6SA A2A! X@@FA"$ GDI@AC
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRG7PH42UDPBF/IRG7PH42UD-EP
Dimensions are shown in millimeters (inches)
TO-247AD Package Outline
TO-247AD Part Marking Information
@Y6HQG@) UCDTADTA6IADSBQ"7 !F9@ XDUCA6TT@H7GA GPUA8P9@A$%$& 6TT@H7G@9APIAXXA"$A! DIAUC@A6TT@H7GAGDI@AACA Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqArrA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S
A"$C $%AAAAAAAAAAA$&
96U@A8P9@ @6SAA2A! X@@FA"$ GDI@AC
TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/2009
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